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Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel VDS (V) rDS(on) (W) ID (mA)
2.0 @ VGS = 4.5 V 250
N-Channel 20
2.5 @ VGS = 2.5 V 150
3.8 @ VGS = -4.5 V -180
P-Channel
P Channel -20
20
5.0 @ VGS = -2.5 V -100
SOT-363
SC-70 (6-Leads)
Marking Code
S1 1 6 D1
RE XX
YY
G1 2 5 G2 Lot Traceability
and Date Code
D2 3 4 S2 Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20
V
Gate-Source Voltage VGS "8 "8
TA = 25_C 250 -180
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 200 -140 mA
Pulsed Drain Current IDM 500 -500
TA = 25_C 0.20
Maximum Power Dissipationa PD W
TA = 70_C 0.13
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 625 (Total) _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 71303 www.vishay.com S
S-03840--Rev. B, 21-May-01 1
Si1501DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VGS = 0 V, ID = 10 mA N-Ch 20 24
Drain-Source
Drain Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = -10 mA P-Ch -20 -24
V
VDS = VGS, ID = 50 mA N-Ch 0.4 0.9 1.5
Gate Threshold Voltage VGS( h)
GS(th)
VDS = VGS, ID = -50 mA P-Ch -0.4 -0.9 -1.5
N-Ch "2 "100
Gate-Body
Gate Body Leakage IGSS VDS = 0 V, VGS = "8 V
V
P-Ch "2 "100
nA
VDS = 20 V, VGS = 0 V N-Ch 0.001 100
VDS = -20 V, VGS = 0 V P-Ch -0.001 -100
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V, TJ = 55_C N-Ch 1
mA
VDS = -20 V, VGS = 0 V, TJ = 55_C P-Ch -1
VDS w 2.5 V, VGS = 5.0 V N-Ch 120
VDS v -2.5 V, VGS = -5.0 V P-Ch -120
On State Drain Currenta
On-State ID( )
D(on) mA
VDS w 4.5 V, VGS = 8.0 V N-Ch 400
VDS v -4.5 V, VGS = -8.0 V P-Ch -400
VGS = 2.5 V, ID = 150 mA N-Ch 1.6 2.5
VGS = -2.5 V, ID = -75 mA P-Ch 4 5
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 250 mA N-Ch 1.2 2.0
VGS = -4.5 V, ID = -180 mA P-Ch 2.6 3.8
VDS = 2.5 V, ID = 50 mA N-Ch 150
Forward Transconductancea gf
fs mS
VDS = -2.5 V, ID = - 50 mA P-Ch 200
IS = 50 mA, VGS = 0 V N-Ch 0.7 1.2
Diode Forward Voltagea VSD V
IS = -50 mA, VGS = 0 V P-Ch -0.7 -1.2
Dynamicb
N-Ch 300 450
Total Gate Charge Qg
N-Channel P-Ch 300 450
VDS = 5 V, VGS = 4.5 V, ID = 100 mA N-Ch 25
Gate-Source
Gate Source Charge Qgs pC
P Channel
P-Channel P-Ch 25
VDS = -5 V, VGS = -4.5 V ID = -100 mA
V V, 100 A N-Ch 100
Gate-Drain
Gate Drain Charge Qgd
d
P-Ch 100
N-Ch 15
Input Capacitance Ciiss
N-Channel P-Ch 15
VDS = 5 V, VGS = 0 V N-Ch 11
Output Capacitance Coss pF
P Channel
P-Channel P-Ch 11
VDS = -5 V VGS = 0 V
V, N-Ch 5
Reverse Transfer Capacitance Crss
P-Ch 5
Switching
N-Ch 7 12
Turn-On
Turn On Time td( )
d(on)
P-Ch 7 12
N-Channel
N Channel
VDD = 3 V, RL = 100 W N-Ch 25 35
Rise Time tr
ID = 0.25 A, VGEN = 4.5 V, Rg = 10 W P-Ch 25 35
ns
P Channel
P-Channel N-Ch 19 30
Turn-Off
Turn Off Delay Time td( ff)
d(off) VDD = -3 V RL = 100 W
3 V, P-Ch 19 30
ID = -0.25 A, VGEN = -4.5 V, Rg = 10 W
N-Ch 9 15
Fall Time tf
P-Ch 9 15
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com Document Number: 71303
2 S-03840--Rev. B, 21-May-01
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
1.25 0.8
VGS = 3.5 thru 5 V
TC = -55_C
1.00
0.6 25_C
I D - Drain Current (A)
I D - Drain Current (A)
3V
0.75
2.5 V 0.4
125_C
0.50
2V
0.2
0.25
1.5 V
1V
0.00 0.0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
7 50
6
40
r DS(on) - On-Resistance ( W )
C - Capacitance (pF)
5
30
4
3 Ciss
20
VGS = 2.5 V
2 Coss
10
1 VGS = 4.5 V Crss
0 0
0 1 2 3 4 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 6 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
8 ID = 100 mA 1.4 ID = 100 m A
r DS(on) - On-Resistance (W)
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C)
Document Number: 71303 www.vishay.com S
S-03840--Rev. B, 21-May-01 3
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
3 8
1 TJ = 125_C
r DS(on) - On-Resistance ( W )
6
I S - Source Current (A)
0.1
ID = 250 mA
TJ = 25_C 4
0.01
2
TJ = -55_C
0.001 0
0.00 0.3 0.6 0.9 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2
ID = 50 mA
0.1
V GS(th) Variance (V)
-0.0
-0.1
-0.2
-0.3
-0.4
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
www.vishay.com Document Number: 71303
4 S-03840--Rev. B, 21-May-01
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
1.2 0.5
5V TC = -55_C
1.0
0.4
4.5 V
0.8 25_C
I D - Drain Current (A)
I D - Drain Current (A)
4V
0.3
0.6 3.5 V
125_C
0.2
0.4 3V
2.5 V 0.1
0.2
2V
0.0 0.0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
8 45
36
r DS(on) - On-Resistance ( W )
6
C - Capacitance (pF)
27
VGS = 2.5 V
4 Ciss
VGS = 4.5 V 18
Coss
2
9
Crss
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 6 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
8 ID = 80 mA 1.4 ID = 180 m A
r DS(on) - On-Resistance (W)
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C)
Document Number: 71303 www.vishay.com S
S-03840--Rev. B, 21-May-01 5
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1 6
TJ = 150_C 5
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.1 4
ID = 180 mA
3
TJ = 25_C
0.01 2
1
0.001 0
0.00 0.5 01 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.3
ID = 50 mA
0.2
V GS(th) Variance (V)
0.1
0.0
-0.1
-0.2
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
www.vishay.com Document Number: 71303
6 S-03840--Rev. B, 21-May-01
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1