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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/622
Devices Qualified Level
JAN
2N7368 JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 4.0 Adc
Collector Current IC 10 Adc
Total Power Dissipation @ TC = 250C (1) PT 115 W
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS TO-254*
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RJC 1.5 C/W
0 0
1) Derate linearly 0.657 W/ C for TC > 25 C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.2 Adc VCEO(sus) 80 Vdc
Collector-Emitter Cutoff Current
VCE = 70 Vdc ICES 1.0 mAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc ICEX 1.0 mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc IEBO 1.0 mAdc
6 Lake Street, Lawrence, MA 01841 120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N7368 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc hFE 50 175
IC = 3.0 Adc, VCE = 2.0 Vdc 30 140
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc VCE(sat) 1.0 Vdc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc VBE(sat) 1.5 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz hfe 4.0 20
Output Capacitance
VCB =10 Vdc, IE = 0, 100 kHz f 1.0 MHz Cobo 500 pF
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t 1.0 s
Test 1
VCE = 11.5 Vdc, IC = 10 Adc
Test 2
VCE = 45 Vdc, IC = 2.5 Adc
Test 3
VCE = 60 Vdc, IC = 0.9 Adc
(2) Pulse Test: Pulse Width = 300