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SEMICONDUCTOR KMB8D2N60QA
TECHNICAL DATA N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Back-light Inverter. H
T
D P G L
FEATURES
VDSS=60V, ID=8.2A.
Drain-Source ON Resistance. A
DIM MILLIMETERS
RDS(ON)=22m (Max.) @ VGS=10V A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=27m (Max.) @ VGS=4.5V B2 _
8 5 6.02 + 0.3
Super High Dense Cell Design D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
H _
1.63 + 0.2
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) 1 4 L _
0.65 + 0.2
P 1.27
CHARACTERISTIC SYMBOL PATING UNIT T 0.20+0.1/-0.05
Drain Source Voltage VDSS 60 V
Gate Source Voltage VGSS 20 V
DC@TA=25 8.2 A
I D*
Drain Current DC@TA=70 6.6 A
FLP-8
Pulsed IDP 40 A
Drain Source Diode Forward Current IS 3.0 A
TA=25 3.0 W
Drain Power Dissipation PD*
TA=70 2.0 W
Tj KMB8D2N
Maximum Junction Temperature 150
60QA
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient RthJA* 41 /W
Note : *Surface Mounted on 1 1 FR4 Board
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2007. 9. 3 Revision No : 1 1/4
KMB8D2N60QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250 A 60 - - V
VDS=48V, VGS=0V - - 1
Drain Cut-off Current IDSS A
VDS=48V, VGS=0V, Tj=70 - - 5
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=8.2A - 16 22
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=7.6A - 20 27
Forward Transconductance Gfs* VDS=5V, ID=8.2A - 2.4 - S
Dynamic
Input Capaclitance Ciss - 1920 2300
Ouput Capacitance Coss VDS=30V, VGS=0V, f=1MHz - 155 - pF
Reverse Transfer Capacitance Crss - 116 -
Total Gate Charge (VGS=10V) - 47.6 58
Qg*
Total Gate Charge (VGS=4.5V) - 24.2 30
VDS=30V, VGS=10V, ID=8.2A nC
Gate-Source Charge Qgs* - 6.0 -
Gate-Drain Charge Qgd* - 14.4 -
Turn-On Delay Time td(on)* - 8.2 -
Turn-On Rise Time tr* VDD=30V, VGS=10V - 5.5 -
ns
Turn-Off Delay Time td(off)* RL=3.6 , RG=3 - 29.7 -
Turn-Off Fall Time tf* - 5.2 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=1.7A, - 0.74 1.0 V
Note
1. Pulse Test : Pulse width 10 , Duty cycle 1%
2007. 9. 3 Revision No : 1 2/4
KMB8D2N60QA
Fig1. ID - VDS Fig2. RDS(ON) - ID
40 50 Common Source
VGS=8V, 10V Common Source
On-Resistance RDS(ON) (m)
Ta=25 C Ta=25 C
VGS=6V Pulse Test Pulse Test
40
Drain Current ID (A)
30
VGS=5.5V
VGS=4.0V 30
VGS=4.5V
20
20
10 VGS=3.5V VGS=10V
10
0 0
0 4 8 12 16 20 0 10 20 30 40 50
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(ON) - Tj
40 60
Common Source
Common Source
On-Resistance RDS(ON) (m)
VDS=5V
50 VGS=10V
Pulse Test
Drain Current ID (A)
Pulse Test
30
40
20 30
20
10
150 C 25 C 10
-55 C
0 0
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150 175
Gate Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig 6. IS - VSDF
5 40
Gate Threshold Voltage Vth (V)
Common Source
Common Source
Ta=25 C
VGS=VDS
4 Pulse Test
Drain Current ID (A)
ID=250