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SSE90N06-30P
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente 87 A, 60 V, RDS(ON) 26.5 m

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
TO-220P
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density D
trench process to provide low RDS(on) and to ensure minimal power loss C
and heat dissipation. Typical applications are DC-DC converters and
power management in portable and battery-powered products such as B R
computers, printers, PCMCIA cards, cellular and cordless telephones. A
T
E
S

TYPICAL APPLICATIONS G
Low RDS(on) Provides Higher Efficiency and F I
Extends Battery Life. H
Low Thermal impedance copper leadframe J K
TO-220P saves board space. L
Fast Switch speed. U
High performance trench technology. X M
P
N
PRODUCT SUMMARY O V
SSE90N06-30P
VDS(V) RDS(on) (m ID(A) Q Q W
26.5@VGS= 10V 1 2 3
60 87 1
32.5@VGS= 4.5V Dimensions in millimeters
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
N-Channel A 7.90 8.10 N 0.75 0.95
D2 B 9.45 9.65 O 0.66 0.86
C 9.87 10.47 P 13.50 14.50
D - 11.50 Q 2.44 3.44
E 1.06 1.46 R 3.50 3.70
F 2.60 3.00 S 1.15 1.45
G1 G 6.30 6.70 T 4.30 4.70
H 8.35 8.75 U - 2.7
J 1.60 Typ. V 1.89 3.09
K 1.10 1.30 W 0.40 0.60
S3 L 1.17 1.37 X 2.60 3.60
M - 1.50

ABSOLUTE MAXIMUM RATINGS(TA=25