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AM83135-015
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
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. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA
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EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
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INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
POUT = 15 W MIN. WITH 5.2 dB GAIN .310 x .310 2LFL (S064)
ORDER CODE BRANDING
DESCRIPTION AM83131-015 83135-15
The AM83135-015 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica-
tions. PIN CONNECTION
This device is characterized at 100