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2N5400(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.130v)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -130 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.625 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -130 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -120 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V
Collector cut-off current ICBO VCB= -100 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -3 V, IC=0 -0.1 A
hFE1 VCE= -5 V, IC=-1mA 30
DC current gain hFE2 VCE= -5 V, IC= -10mA 40 180
hFE3 VCE= -5 V, IC=-50mA 40
VCE(sat) IC= -10mA, IB= -1mA -0.2 V
Collector-emitter saturation voltage
VCE(sat) IC= -50mA, IB= -5mA -0.5 V
VBE(sat) IC= -10mA, IB= -1mA -1 V
Base-emitter saturation voltage
VBE(sat) IC= -50mA, IB= -5mA -1 V
VCE=-10V, IC=-10mA
Transition frequency fT 100 MHz
f =30MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 6 pF
2N5400(PNP)
TO-92 Bipolar Transistors
Typical Characteristics