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SEMICONDUCTOR 2N2904E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION. B
B1
FEATURES
1 6 DIM MILLIMETERS
C
Low Leakage Current A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
: ICEX=50nA(Max.), IBL=50nA(Max.) 2 5 _
C
B 1.6 + 0.05
@VCE=30V, VEB=3V. B1 _
1.2 + 0.05
D
3 4 C 0.50
Excellent DC Current Gain Linearity. D _
0.2 + 0.05
H _
0.5 + 0.05
Low Saturation Voltage _
J 0.12 + 0.05
P P
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. P 5
Low Collector Output Capacitance
H
: Cob=4pF(Max.) @VCB=5V.
J
1. Q 1 EMITTER
2. Q 1 BASE
3. Q 2 COLLECTOR
4. Q 2 EMITTER
5. Q 2 BASE
6. Q 1 COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TES6
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
EQUIVALENT CIRCUIT (TOP VIEW)
Collector Current IC 200 mA
6 5 4
Base Current IB 50 mA
Collector Power Dissipation PC * 200 mW
Junction Temperature Tj 150
Q1 Q2
Storage Temperature Range Tstg -55 150
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
ZC
1 2 3
2008. 9. 23 Revision No : 3 1/4
2N2904E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA
Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
hFE(1) VCE=1V, IC=0.1mA 40 - -
hFE(2) VCE=1V, IC=1mA 70 - -
DC Current Gain * hFE(3) VCE=1V, IC=10mA 100 - 300
hFE(4) VCE=1V, IC=50mA 60 - -
hFE(5) VCE=1V, IC=100mA 30 - -
VCE(sat)1 IC=10mA, IB=1mA - - 0.2
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=50mA, IB=5mA - - 0.3
VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=50mA, IB=5mA - - 0.95
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 300 - - MHz
Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF
Input Impedance hie 1.0 - 10 k
Voltage Feedback Ratio hre 0.5 - 8.0 x10-4
VCE=10V, IC=1mA, f=1kHz
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 1.0 - 40
VCE=5V, IC=0.1mA Rg=1k ,
Noise Figure NF - - 5.0 dB
f=10Hz 15.7kHz
Vout
Delay Time td 10k - - 35
C Total< 4pF
275
V in
300ns
VCC =3.0V
Rise Time tr 10.9V - - 35
0
-0.5V t r ,t f < 1ns, Du=2%
Switching Time nS
Vout
Storage Time tstg 10k - - 200
275
V in C Total< 4pF
1N916
or equiv.
20