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2SA1576A
SOT-323 Transistor(PNP)

1. BASE SOT-323
2. EMITTER

3. COLLECTOR




Features
Excellent hFE linearity
Complements the 2SC4081


MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V Dimensions in inches and (millimeters)

VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V

Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 A

Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 A

DC current gain hFE VCE=-6V,IC=-1mA 120 560

Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V

Transition frequency fT VCE=-12V,IC=-2mA,f=30MHz 140 MHz

Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 4 5 pF

CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
Marking FQ FR FS
2SA1576A
SOT-323 Transistor(PNP)


Typical Characteristics