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STW8NB90
STH8NB90FI
N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID
STW8NB90 900 V < 1.45 8A
STH8NB90FI 900 V < 1.45 5A
TYPICAL RDS(on) = 1.1
(s)
s
s EXTREMELY HIGH dv/dt CAPABILITY
ct
s 100% AVALANCHE TESTED
3
VERY LOW INTRINSIC CAPACITANCES 3
du )
s
2 2
s GATE CHARGE MINIMIZED 1 1
ro
t(s
DESCRIPTION TO-247 ISOWATT218
P
Using the latest high voltage MESH OVERLAYTM
te uc
process, STMicroelectronics has designed an ad-
le od
vanced family of power MOSFETs with outstanding
o
performances. The new patent pending strip layout
bs e Pr
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
- O let
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
(s) bso
tics.
ct
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
du ) - O
s SWITH MODE POWER SUPPLIES (SMPS)
ro
s DC-AC CONVERTERS FOR WELDING
t(s
EQUIPMENT
P
ete oduc
ABSOLUTE MAXIMUM RATINGS
ol
Symbol Parameter Value Unit
bs e Pr
STW8NB90 STH8NB90FI
VDS Drain-source Voltage (VGS = 0) 900 V
O VDGR Drain-gate Voltage (RGS = 20 k) 900 V
let
VGS Gate- source Voltage