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STP20N06
STP20N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE VDSS R DS(on) ID
STP20N06 60 V < 0.085 20 A
STP20N06FI 60 V < 0.085 13 A
s TYPICAL RDS(on) = 0.06
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW GATE CHARGE 2
s)
2
1 1
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
t(
uc
s APPLICATION ORIENTED TO-220 ISOWATT220
CHARACTERIZATION
d
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
P ro
te
s SOLENOID AND RELAY DRIVERS
REGULATORS
le
s INTERNAL SCHEMATIC DIAGRAM
DC-DC & DC-AC CONVERTERS
so
s
s MOTOR CONTROL, AUDIO AMPLIFIERS
Ob
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
-
ct (s)
ABSOLUTE MAXIMUM RATINGS
o du
Pr
Symbol Parameter Value Unit
STP20N06 STP20N06FI
e
let
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
o
bs
V GS Gate-source Voltage