bfg424f.pdf part of . Electronic Components Datasheets bfg424f bfg424f.pdf, . Electronic Components Datasheets Active components Transistors Philips bfg424f.pdf text manual preview

Text preview for : bfg424f.pdf part of . Electronic Components Datasheets bfg424f . Electronic Components Datasheets Active components Transistors Philips bfg424f.pdf

Back to : bfg424f.pdf | Home

BFG424F
NPN 25 GHz wideband transistor
Rev. 01 -- 21 March 2006 Product data sheet

1. Product profile

1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

MSC895

1.2 Features
s Very high power gain
s Low noise figure
s High transition frequency
s Emitter is thermal lead
s Low feedback capacitance

1.3 Applications
s Radio Frequency (RF) front end wideband applications such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVison (SATV) tuners
x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)

1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 10 V
VCEO collector-emitter voltage open base - - 4.5 V
IC collector current - 25 30 mA
Ptot total power dissipation Tsp 90