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MMBT4401
Switching Transistor NPN Silicon COLLECTOR
3
3
1 1
BASE
2
2
EMITTER
SOT-23
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base VOltage VEBO 6.0 Vdc
Collector Current-Continuous IC 600 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) 225 mW
TA=25 C PD
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient R qJA 556 C/W
Total Device Dissipation 300 mW
Alumina Substrate, (2) TA=25 C PD
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient R qJA 417 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBT4401=2X
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc
Collector-Base Breakdown Voltage (IC=0.1mAdc, IE=0) V(BR)CBO 60 - Vdc
Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0) V(BR)EBO 6.0 - Vdc
Base Cutoff Current (VCE=35 Vdc, VEB =0.4 Vdc) IBEV - 0.1 uAdc
Collector Cutoff Current (VCE=35Vdc, VEB=0.4Vdc) ICEX - 0.1 uAdc
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width <300