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2STR2160
Low voltage fast-switching PNP power transistor
Preliminary Data
Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface
mounting circuits
Applications SOT-23
LED
Battery charger
Motor and relay driver
Voltage regulation
Figure 1. Internal schematic diagram
Description
The device in a PNP transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.
Table 1. Device summary
Order code Marking Package Packing
2STR2160 260 SOT-23 Tape and reel
June 2008 Rev 1 1/9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 9
change without notice.
Content 2STR2160
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2/9
2STR2160 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -60 V
VCEO Collector-emitter voltage (IB = 0) -60 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC Collector current -1 A
ICM Collector peak current (tP < 5ms) -2 A
Ptot Total dissipation at Tamb = 25