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SEMICONDUCTOR KTC3571S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP. E
L B L
Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
MAXIMUM RATING (Ta=25 )
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
CHARACTERISTIC SYMBOL RATING UNIT H 0.95
J 0.13+0.10/-0.05
Collector-Base Voltage VCBO 130 V K 0.00 ~ 0.10
Q
L 0.55
Collector-Emitter Voltage VCEO 100 V P P
M 0.20 MIN
N 1.00+0.20/-0.10
Emitter-Base Voltage VEBO 5 V
N
C
P 7
J
Q 0.1 MAX
DC IC 1
K
M
Collector Current A
Pulse ICP 3
Base Current IB 300 mA 1. EMITTER
2. BASE
Collector Power Dissipation** PC 350 mW
3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note : * Package Mounted on 99.5% Alumina 10 8 0.6mm.
SOT-23
MARKING
Lot No.
Type Name
KMB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A 130 - - V
Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=1mA 100 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A 5 - - V
Collector Cut-Off Current ICBO VCB=80V - - 100 nA
Emitter Cut-Off Current IEBO VEB=4V, IC=0A - - 100 nA
Collector-Emitter Cut-Off Current ICES VCES=80V, VBE=0V - - 100 nA
VCE(sat) (1) IC=100mA, IB=10mA - - 0.04
Collector-Emitter Saturation Voltage ** VCE(sat) (2) IC=500mA, IB=50mA - - 0.12 V
VCE(sat) (3) IC=1A, IB=100mA - - 0.2
Base-Emitter Saturation Voltage ** VBE(sat) IC=1A, IB=100mA - - 1.05 V
Base-Emitter Voltag VBE VCE=10V, IC=1A - - 0.9 V
hFE(1) VCE=10V, IC=1mA 150 - -
hFE(2) VCE=10V, IC=250mA 150 - 500
DC Current Gain **
hFE(3) VCE=10V, IC=500mA 100 - -
hFE(4) VCE=10V, IC=1A 80 - -
Transition Frequency fT VCE=10V, IC=50mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 9.5 - pF
** Pulse Width = 300 S, Duty Cycle 2%.
2011. 2. 18 Revision No : 5 1/3
KTC3571S
VCE(sat) - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
1 10
IC/IB=10 IC/IB=50
Ta=25 C
VOLTAGE VCE(sat) (V)
VOLTAGE VCE(sat) (V)
Ta=100 C
1
10-1
Ta=25 C 10-1
Ta=-55 C
10-2 10-2
10-1 1 10 102 103 104 10-1 1 10 102 103 104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE - I C h FE - I C
1.2 600
BASE-EMITTER VOLTAGE VBE (V)
VCE=10V VCE=10V
DC CURRENT GAIN h FE
Ta=100 C
0.8 Ta=-55 C 400
Ta=25 C
Ta=25 C
0.4 200
Ta=100 C Ta=-55 C
0 0
10-1 1 10 102 103 104 10-1 1 10 102 103 104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C I C - VCE
10 2
IC/IB=20 Ta=25 C IB=3150