Text preview for : pbss302nd.pdf part of . Electronic Components Datasheets pbss302nd . Electronic Components Datasheets Active components Transistors Philips pbss302nd.pdf



Back to : pbss302nd.pdf | Home

PBSS302ND
40 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 02 -- 18 February 2008 Product data sheet




1. Product profile

1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS302PD.

1.2 Features
I Ultra low collector-emitter saturation voltage VCEsat
I 4 A continuous collector current capability IC
I Up to 15 A peak current
I Very low collector-emitter saturation resistance
I High efficiency due to less heat generation

1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 40 V
IC collector current [1] - - 4 A
ICM peak collector current single pulse; - - 15 A
tp 1 ms
RCEsat collector-emitter IC = 6 A; [2] - 55 75 m
saturation resistance IB = 600 mA

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300