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BCV65
NPN/PNP general-purpose transistor
Rev. 4 -- 27 July 2010 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pair
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 30 V
IC collector current - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA 75 - 800
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1, 3 collector
4 3 1
2 common base
4 common emitter
2 4
1 2
3
006aab229
NXP Semiconductors BCV65
NPN/PNP general-purpose transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BCV65 - plastic surface-mounted package; 4 leads SOT143B
4. Marking
Table 4. Marking codes
Type number Marking code[1]
BCV65 97*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
IC collector current - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Per device
Ptot total power dissipation Tamb 25