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Advance Technical Information

GigaMOSTM IXFK120N30T VDSS = 300V
Power MOSFET IXFX120N30T ID25 = 120A
RDS(on) 24m
N-Channel Enhancement Mode
trr 200ns
Avalanche Rated
Fast Intrinsic Diode TO-264 (IXFK)

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25