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STN690A
High performance low voltage NPN transistor
Features
Very low collector to emitter saturation voltage
DC current gain, hFE > 100
4
3 A continuous collector current
40 V breakdown voltage V(BR)CER
SOT-223 plastic package for surface mounting
3
circuits in tape and reel packaging
2
1
Applications SOT-223
Power management in portable equipment
Voltage regulation in bias supply circuits
Switching regulator in battery charger
Figure 1. Internal schematic diagram
applications
Heavy load driver
Description
The device in manufactured in low voltage NPN
planar technology by using a "Base Island" layout.
The resulting transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
Table 1. Device summary
Order code Marking Package Packaging
STN690A N690A SOT-223 Tape and reel
February 2009 Rev 2 1/9
www.st.com 9
Electrical ratings STN690A
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 40 V
VCER Collector-emitter voltage (R BE = 47 ) 40 V
VCEO Collector-emitter voltage (IB = 0) 30 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 3 A
ICM Collector peak current (tP < 5 ms) 6 A
Ptot Total dissipation at Tamb = 25