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STL50NH3LL
N-channel 30 V - 0.011 - 13 A - PowerFLATTM (6x5)
ultra low gate charge STripFETTM Power MOSFET
Features
Type VDSS RDS(on) ID
STL50NH3LL 30V <0.013 13A (4)
Improved die-to-footprint ratio
Very low profile package (1 mm max)
Very low thermal resistance
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PowerFLATTM( 6x5 )
Very low gate charge
Low threshold device
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Switching application
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Description
Figure 1.
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Internal schematic diagram
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This application specific Power MOSFET is the
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latest generation of STMicroelectronics unique
"STripFETTM" technology. The resulting transistor
is optimized for low on-resistance and minimal
-
(s)
gate charge. The Chip-scaled PowerFLATTM
package allows a significant board space saving,
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still boosting the performance.
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Table 1. Device summary
Order code Marking Package Packaging
O STL50NH3LL L50NH3LL PowerFLATTM (6x5) Tape & reel
December 2007 Rev 10 1/12
www.st.com 12
Contents: STL50NH3LL
Contents:
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2/12
STL50NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS(1) Gate-source voltage