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SEMICONDUCTOR KF3N50FZ/FS
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A C
This planar stripe MOSFET has better characteristics, such as fast
F
switching time, fast reverse recovery time, low on resistance, low gate
O
charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS
B
electronic ballast and switching mode power supplies. A _
10.16 + 0.2
G
B _
15.87 + 0.2
C _
2.54 + 0.2
FEATURES D _
0.8 + 0.1
E _
3.18 + 0.1
VDSS= 500V, ID= 3A
K
F _
3.3 + 0.1
Drain-Source ON Resistance : RDS(ON)=2.5 (Max) @VGS = 10V L
G _
12.57 + 0.2
M H _
0.5 + 0.1
R
Qg(typ) = 7.50nC
J
J _
13.0 + 0.5
trr(typ) = 120ns (KF3N50FS) D
K _
3.23 + 0.1
L 1.47 MAX
trr(typ) = 300ns (KF3N50FZ)
M 1.47 MAX
N N H
N _
2.54 + 0.2
O _
6.68 + 0.2
Q _
4.7 + 0.2
MAXIMUM RATING (Tc=25 )
R _
2.76 + 0.2
1 2 3
Q
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 3*
TO-220IS (1)
ID
Drain Current @TC=100 1.8* A
Pulsed (Note1) IDP 7*
Single Pulsed Avalanche Energy EAS 110 mJ
(Note 2)
Repetitive Avalanche Energy EAR 4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 10 V/ns
(Note 3)
Drain Power Tc=25 25 W
PD
Dissipation Derate above 25 0.2 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 5.0 /W
Thermal Resistance, Junction-to-
RthJA 62.5 /W
Ambient
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
G
S
2010. 11. 29 Revision No : 0 1/2
KF3N50FZ/FS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.5A - 2.0 2.5
Dynamic
Total Gate Charge Qg - 8.0 -
VDS=400V, ID=3A
Gate-Source Charge Qgs - 2.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.5 -
Turn-on Delay time td(on) - 15 -
VDD=250V
Turn-on Rise time tr - 20 -
ID=3A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 350 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 45 - pF
Reverse Transfer Capacitance Crss - 4.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS Pulsed Source Current ISP - - 12
Diode Forward Voltage VSD IS=3A, VGS=0V - - 1.4 V
KF3N50FZ - 300 -
Reverse Recovery Time trr ns
KF3N50FS IS=3A, VGS=0V, - 120 -
KF3N50FZ dIs/dt=100A/ - 1.1 -
Reverse Recovery Charge Qrr C
KF3N50FS - 0.25 -
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1 1
KF3N50 KF3N50
FZ 001 2 FS 001 2
1 PRODUCT NAME
2 LOT NO
2010. 11. 29 Revision No : 0 2/2
KF3N50FZ/FS
Fig1. ID - VDS Fig2. ID - VGS
1
10
VDS=30V
VGS=10V
Drain Current ID (A)
Drain Current ID (A)
VGS=7V 10
1
TC=100 C
0
10
25 C
VGS=5V 10
0
-1
10
-2
10 -1
10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 6
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
5
1.1
4
1.0 VGS=7V
3
VGS=10V
2
0.9
1
0.8 0
-100 -50 0 50 100 150 0 1 2 3 4 5 6
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
10
2 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 1.5A
2.5
Normalized On Resistance
10
1 2.0
TC=100 C 25 C 1.5
10
0 1.0
0.5
10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2010. 11. 29 Revision No : 0 3/6
KF3N50FZ/FS
Fig 7. C - VDS Fig8. Qg- VGS
1000 12
ID=3A
Gate - Source Voltage VGS (V)
10
Ciss
Capacitance (pF)
100 8
VDS = 400V
Coss 6
10 4
Crss 2
1 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area Fig10. ID - Tj
10 Operation in this 3.5
area is limited by RDS(ON) 10