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BUX87
High voltage NPN power transistor
Features
High voltage capability (450 V VCEO)
Minimum lot-to-lot spread for reliable operation
High DC current gain
Applications
1
Flyback and forward single transistor low 2
3
power converters
SOT-32
Description
The BUX87 is manufactured using high voltage
multi-epitaxial planar technology for high Figure 1. Internal schematic diagram
switching speeds and high voltage withstand
capability.
Table 1. Device summary
Order code Marking Package Packaging
BUX87 BUX87 SOT-32 Tube
April 2009 Doc ID 4508 Rev 5 1/9
www.st.com 9
Electrical ratings BUX87
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 1000 V
VCEO Collector-emitter voltage (IB = 0) 450 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 0.5 A
ICM Collector peak current (tp 5ms) 1 A
IB Base current 0.3 A
IBM Base peak current (tp 5ms) 0.6 A
PTOT Total power dissipation at Tc = 25