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2SD1468S
TO-92S Transistor (NPN)
1. EMITTER TO-92S
2. COLLECTOR
123 3. BASE
Features
Low saturation voltage, typically Vce(sat)=0.006V
Ideal for voltage, high current drives,
High DC current gain and high current
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 300 mW Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 15 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V
Collector cut-off current ICBO VCB=20V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A
DC current gain hFE VCE=3V, IC=100mA 120 560
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA
B 0.4 V
Transition frequency fT VCE=5V, IC=50mA, f=100MHz 50 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
2SD1468S
TO-92S Transistor (NPN)
Typical Characteristics