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STD65N55LF3
N-channel 55 V, 7.0 m 80 A DPAK
,
STripFETTM III Power MOSFET
Features
RDS(on)
Order code VDSS ID Pw
max.
STD65N55LF3 55 V < 8.5 m 80 A 110 W
3
Low threshold drive
1
100% avalanche tested
DPAK
Application
Switching applications
Automotive
Description
Figure 1. Internal schematic diagram
This product is a N-channel enhancement mode
Power MOSFET built with STripFETTM III
technology which is especially tailored to
minimized on-state resistance and gate charge,
providing superior switching performance.
Table 1. Device summary
Order code Marking Package Packaging
STD65N55LF3 65N55LF3 DPAK Tape and reel
October 2010 Doc ID 16371 Rev 2 1/13
www.st.com 13
Contents STD65N55LF3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 16371 Rev 2
STD65N55LF3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 55 V
VGS Gate-Source voltage