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CEM3259
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
5
30V, 7.6A, RDS(ON) = 22m @VGS = 10V.
RDS(ON) = 33m @VGS = 4.5V.
-30V, -5.9A, RDS(ON) = 36m @VGS = -10V.
RDS(ON) = 52m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2
8 7 6 5
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 1 2 3 4
1 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS