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Guilin Strong Micro-Electronics Co.,Ltd.
GM2301
SOT-23 (SOT-23 Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P MOS
MAXIMUM RATINGS
Characteristic Symbol Max Unit
Drain-Source Voltage
BVDSS -20 V
-
Gate- Source Voltage
VGS +10 V
-
Drain Current (continuous)
ID -2.8 A
-
Drain Current (pulsed)
IDM -10 A
-
Total Device Dissipation
PD 900 mW
TA=25 25
Junction TJ 150
Storage Temperature Tstg -55to+150
DEVICE MARKING
GM2301=A1
GM2301
2301=
Guilin Strong Micro-Electronics Co.,Ltd.
GM2301
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
Characteristic Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
BVDSS -20 -- -- V
-(ID = -250uA ,VGS=0V)
Gate Threshold Voltage
VGS(th) -0.5 -- -1.5 V
(ID = -250uA ,VGS= VDS)
Diode Forward Voltage Drop
VSD -- -- -1.5 V
(IS= -0.75A ,VGS=0V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= -16V) IDSS -- -- -1 uA
(VGS=0V, VDS= -16V, TA=55) -10
Gate Body Leakage
IGSS -- -- +100 nA
(VGS=+10V, VDS=0V)
Static Drain-Source On-State Resistance
RDS(ON) -- -- 100 m
(ID= -2.8A ,VGS= -4.5V)
Static Drain-Source On-State Resistance
RDS(ON) -- -- 120 m
(ID= -2A ,VGS= -2.5V)
Input Capacitance
CISS -- 600 -- pF
(VGS=0V, VDS= -10V,f=1MHz)
Output Capacitance
COSS -- 120 -- pF
(VGS=0V, VDS= -10V,f=1MHz)
Turn-ON Time
t(on) -- 8 -- ns
(VDS= -10V, ID= -2.8A, RGEN=6)
Turn-OFF Time
t(off) -- 60 -- ns
(VDS= -10V, ID= -2.8A, RGEN=6)
Pulse Width<300s; Duty Cycle<2.0%
Guilin Strong Micro-Electronics Co.,Ltd.
GM2301
DIMENSION