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STD6NF10
N-CHANNEL 100V - 0.22 - 6A IPAK/DPAK
LOW GATE CHARGE STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STD6NF10 100 V <0.250 6A
s TYPICAL RDS(on) = 0.22
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
s LOW THRESHOLD DRIVE 3
2 1
s THROUGH-HOLE IPAK (TO-251) POWER 1
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK
TO-251 TO-252
POWER PACKAGE IN TAPE & REEL (Suffix "-1") (Suffix "T4")
(SUFFIX "T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
INTERNAL SCHEMATIC DIAGRAM
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage