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KSC5039F NPN PLANAR SILICON TRANSISTOR
HIGH VOLTAGE POWER SWITCH
SWITCHING APPLICATION TO-220F
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage V CEO 400 V
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 5 A
Collector Current (Pulse) IC 10 A
Base Current IB 3 A
Collector Dissipation (T C=25) PC 30 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150 1 . Base 2. Collector 3. Emitter
ELECTRICAL CHARACTERISTICS (Tc=25)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector- Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V
Collector- Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 400 V
Emitter- Base Breakdown Voltage BVEBO IC = 1mA, IC = 0 7
Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA
Emitter Cutoff Current IEBO VEB = 7V, IC = 0 10 uA
%DC Current Gain hFE VCE = 5V, IC = 0.3A 10
%Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.5A 1.5 V
%Base Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 0.5A 2.0 V
Current Gain Bandwidth Product fT VCE = 5V, IC = 0.1A 10 MHz
Output Capacitance COB VCB = 10V , f = 1MHz 40 pF
Turn On Time tON IB1 = -IB2 = 0.5A 1 uS
Storage Time tSTG IC = 2.5A 3 uS
Fall Time tF VCC=150V 0.8 uS
% Plus test : PW=300 I, Duty Cycle=2% Pulsed
KSC5039F NPN SILICON TRANSISTOR
KSC5039F NPN SILICON TRANSISTOR