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MMBT589
PNP Silicon
Elektronische Bauelemente General Purpose Transistor

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES SOT-23
2 A
L Dim Min Max
Emitter
3 A 2.800 3.040
3
Top View B S B 1.200 1.400
1
1 Base 1 2
C 0.890 1.110
2
D 0.370 0.500
V G
Collector G 1.780 2.040
3
C H 0.013 0.100
J 0.085 0.177
D H J
K K 0.450 0.600
MAXIMUM RATINGS* TA=25 unless otherwise noted L 0.890 1.020

Symbol Parameter Value Units S 2.100 2.500
V 0.450 0.600
VCBO Collector-Base Voltage -50 V
All Dimension in mm
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A
PD Total Device Dissipation 310 mW
RJA Thermal Resistance,junction to Ambient 403 /W
TJ, Tstg Junction and Storage Temperature -55-150

MARKING :589

ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-100