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Supertex inc. 2N6661
N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
Free from secondary breakdown The Supertex 2N6661 is an enhancement-mode (normally-
Low power drive requirement off) transistor that utilizes a vertical DMOS structure
Ease of paralleling and Supertex's well-proven silicon-gate manufacturing
process. This combination produces a device with the
Low CISS and fast switching speeds
power handling capabilities of bipolar transistors, and the
Excellent thermal stability
high input impedance and positive temperature coefficient
Integral source-drain diode
inherent in MOS devices. Characteristic of all MOS
High input impedance and high gain structures, this device is free from thermal runaway and
Hi-Rel processing available thermally-induced secondary breakdown.

Applications Supertex's vertical DMOS FETs are ideally suited to a
Motor controls wide range of switching and amplifying applications where
Converters very low threshold voltage, high breakdown voltage, high
Amplifiers input impedance, low input capacitance, and fast switching
Switches speeds are desired.
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)

Ordering Information
BVDSS/BVDGS RDS(ON) ID(ON)
Device Package Option (max) (min)
(V)
() (A)

2N6661 TO-39 90 4.0 1.5
Package is RoHS compliant (`Green')

Pin Configuration



GATE
SOURCE
Absolute Maximum Ratings
Parameter Value DRAIN
TO-39
Drain-to-source voltage BVDSS (Case : Drain)
Drain-to-gate voltage BVDGS
Product Marking
Gate-to-source voltage