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SEMICONDUCTOR KMB8D0P30QA
TECHNICAL DATA P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
H
suitable for Load Switch and Battery pack.
T
D P G L
U
FEATURES
A
VDSS=-30V, ID=-8A.
DIM MILLIMETERS
Drain to Source On Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=20m (Max.) @ VGS=-10V 8 5
B2 _
6.02 + 0.3
RDS(ON)=35m (Max.) @ VGS=-4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
1 H _
1.63 + 0.2
4
L _
0.65 + 0.2
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) P 1.27
T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL RATING UNIT U 0.1 MAX
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS 20 V
DC@Ta=25 (Note 1) ID -8 A FLP-8
Drain Current
Pulsed IDP -40 A
Drain Power Dissipation @Ta=25 (Note 1) PD 2.5 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient (Note 1) RthJA 50 /W
KMB8D0P
Note1) Surface Mounted on 1 1 FR4 Board, t 10sec. 30QA
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2009. 6. 15 Revision No : 0 1/4
KMB8D0P30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=-250 A -30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=-24V - - -1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=-250 A -1.0 - -3.0 V
VGS=-10V, ID=-8A (Note2) - 15 20
Drain to Source On Resistance RDS(ON) m
VGS=-4.5V, ID=-5A (Note2) - 25 35
Forward Transconductance gfs VDS=-5V, ID=-8A (Note2) - 6 - S
Dynamic
Input Capaclitance Ciss - 1371 -
Ouput Capacitance Coss VDS=-15V, VGS=0V, f=1MHz (Note2) - 295 - pF
Reverse Transfer Capacitance Crss - 176 -
VGS=10V - 28.2 -
Total Gate Charge Qg
VGS=4.5V - 15.0 -
VDS=-15V, VGS=-10V, ID=-8A (Note2) nC
Gate to Source Charge Qgs - 5.0 -
Gate to Drain Charge Qgd - 6.4 -
Turn-On Delay Time td(on) - 11.2 -
Turn-On Rise Time tr VDS=-15V, VGS=-10V - 5.8 -
ns
Turn-Off Delay Time td(off) ID=-8A, RG=1.6 (Note2) - 65.0 -
Turn-Off Fall Time tf - 25.0 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage VSD VGS=0V, IS=-1.7A (Note2) - -0.75 -1.2 V
Note2) Pulse Test : Pulse Width 300 , Duty Cycle 2%
2009. 6. 15 Revision No : 0 2/4
KMB8D0P30QA
2009. 6. 15 Revision No : 0 3/4
KMB8D0P30QA
2009. 6. 15 Revision No : 0 4/4