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CEM0215
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
150V, 2A, RDS(ON) = 440m @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D D D D
Surface mount Package. 8 7 6 5
SO-8
1 2 3 4
1 S S S G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS