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2N7002
N-channel TrenchMOS FET
Rev. 06 -- 28 April 2006 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
s Logic level threshold compatible s Very fast switching
s Surface-mounted package s TrenchMOS technology
1.3 Applications
s Logic level translator s High-speed line driver
1.4 Quick reference data
s VDS 60 V s ID 300 mA
s RDSon 5 s Ptot 0.83 W
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
3 D
2 source (S)
3 drain (D)
G
1 2
mbb076 S
SOT23
Philips Semiconductors 2N7002
N-channel TrenchMOS FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
2N7002 TO-236AB plastic surface mounted package; 3 leads SOT23
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25