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2SD717 Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in
a plastic envelope, primarily for use in audio and
general purpose
TO-3P(I)D
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCBO Collector-emitter voltage peak value VBE = 0V - 70 V
VCEO Collector-emitter voltage (open base) - 70 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 80 W
VCEsat Collector-emitter saturation voltage IC = 4.0A; IB=0.4A - 2 V
VF Diode forward voltage IF = 3.5A 1.5 2.0 V
tf Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 0.4 1.0- s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 70 V
VCEO Collector-emitter voltage (open base) - 70 V
VEBO Emitter-base oltage (open colloctor) 5 V
IC Collector current (DC) - 10 A
IB Base current (DC) - 2.5 A
Ptot Total power dissipation Tmb 25 - 80 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICBO Collector-base cut-off current VCB=70V - 0.2 mA
IEBO Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 70 V
VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 0.4A - 3 V
hFE DC current gain IC = 1A; VCE = 5V 50 240
fT Transition frequency at f = 5MHz IC = 1A; VCE = 12V 10 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 350 - pF
ton On times IC=4A,IB1=-IB2=0.4A,VCC=30V 0.3 us
ts Tum-off storage time IC=4A,IB1=-IB2=0.4A,VCC=30V 2.5 us
tf Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 0.4 us
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]