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2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV)
2SK3799
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 1.0 (typ.)
High forward transfer admittance : |Yfs| = 6.0 S (typ.)
Low leakage current : IDSS = 100A (max) (VDS = 720 V)
Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25