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BF620
SOT-89 Transistor(NPN)
1. BASE
1 2. COLLECTOR SOT-89
2 4.6
B
4.4
3 3. EMITTER 1.6
1.8
1.4 1.4
Features
2.6 4.25
2.4 3.75
0.8
Low current (max. 50mA) MIN
0.53
High voltage (max. 300V). 0.44 0.13 B
0.48 0.40
0.35
2x)
0.37
1.5
Video output stages. 3.0
Dimensions in inches and (millimeters)
MarkingDC
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 10 nA
Emitter cut-off current IEBO VEB=5V, IC=0 50 nA
DC current gain hFE VCE=20V, IC=25mA 50
Collector-emitter saturation voltage VCE(sat) IC=30mA, IB=5mA 0.6 V
Transition frequency fT VCE=10V, IC=10mA, f=100MHz 60 MHz
BF620
SOT-89 Transistor(NPN)
Typical Characteristics