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STD3NB50
N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAK
PowerMESHTM MOSFET
PRELIMINARY DATA

TYPE V DSS R DS(on) ID
STD3NB50 500 V < 2.8 3A

s TYPICAL RDS(on) = 2.5
s EXTREMELY HIGH dv/dt CAPABILITY 3
s 100% AVALANCHE TESTED 2 3
1
s VERY LOW INTRINSIC CAPACITANCES 1
s GATE CHARGE MINIMIZED
IPAK DPAK
DESCRIPTION TO-251 TO-252
Using the latest high voltage MESH OVERLAYTM (Suffix "-1") (Suffix "T4")
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 500 V
V DGR Drain- gate Voltage (R GS = 20 k) 500 V
V GS Gate-source Voltage