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SEMICONDUCTOR KTC3114
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION. A
SWITCHING APPLICATION. B D
C
E
FEATURE
F
High DC Current Gain : hFE=600 3600.
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
C 0.7
CHARACTERISTIC SYMBOL RATING UNIT _
D 3.2 + 0.1
E 3.5
Collector-Base Voltage VCBO 50 V F _
11.0 + 0.3
G 2.9 MAX
Collector-Emitter Voltage VCEO 50 V M
H 1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO 5 V N
O K _
0.75 + 0.15
P
1 2 3 L _
15.50 + 0.5
Collector Current IC 150 mA M _
2.3 + 0.1
N _
0.65 + 0.15
Base Current IB 30 mA 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector Power Dissipation PC 1.5 W 3. BASE
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE(Note) VCE=6V, IC=2mA 600 - 3600
Collector- Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=10mA 100 250 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 3.5 - pF
VCE=6V, IC=0.1mA
NF(1) - 0.5 - dB
f=100Hz, Rg=10k
Noise Figure
VCE=6V, IC=0.1mA
NF(2) - 0.3 - dB
f=1kHz, Rg=10k
Note: hFE Classification A:600 1800, B:1200 3600
2003. 7. 24 Revision No : 1 1/3
KTC3114
I C - VCE h FE - I C
160 5k
COMMON 400
COLLECTOR CURRENT I C (mA)
140 3k
EMITTER 200 Ta=100 C
DC CURRENT GAIN h FE
120 Ta=25 C Ta=25 C
100
1k
100 Ta=-25 C
80
500
80
60 300
50
60 40
30
40 20 100
I B =10