Text preview for : 2sc2703_to-92l.pdf part of LGE 2sc2703 to-92l . Electronic Components Datasheets Active components Transistors LGE 2sc2703_to-92l.pdf



Back to : 2sc2703_to-92l.pdf | Home

2SC2703
TO-92L Transistor (NPN)
TO-92L
4.700
5.100


1. EMITTER
7.800
8.200
2. COLLECTOR
0.600
0.800


3. BASE
3 0.350
2 0.550
13.800
1 14.200

Features
High DC Current Gain: hFE=100-320 1.270 TYP
2.440
2.640

0.000 1.600
0.300
0.350
3.700 0.450
4.100 1.280
1.580
4.000


Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V

Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V

Collector cut-off current ICBO VCB=30V,IE=0 0.1