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SEMICONDUCTOR KTK5131V
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES B
2.5 Gate Drive.
Low Threshold Voltage : Vth=0.5 1.5V.
2 DIM MILLIMETERS
High Speed. A _
1.2 + 0.05
D
G
A
B _
0.8 + 0.05
Small Package. 1
H
3 C _
0.5 + 0.05
Enhancement-Mode. _
K
D 0.3 + 0.05
E _
1.2 + 0.05
G _
0.8 + 0.05
P P H 0.40
J _
0.12 + 0.05
MAXIMUM RATING (Ta=25 ) K _
0.2 + 0.05
P 5
CHARACTERISTIC SYMBOL RATING UNIT
C
J
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGSS 20 V 1. SOURCE
2. GATE
DC Drain Current ID 50 mA 3. DRAIN
Drain Power Dissipation PD 100 mW
Channel Temperature Tch 150
VSM
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
D
Marking
G
Type Name
KA
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=100 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A
Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V
Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 20 - - mS
Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 15 40
Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 5.5 - pF
Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 1.6 - pF
Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 6.5 - pF
Switching Turn-on Time ton - 140 - nS
VDD=3V, ID=10mA, VGS=0 2.5V
Time Turn-off Time toff - 140 - nS
2003. 7. 4 Revision No : 0 1/3
KTK5131V
I D - V DS
I D - V DS (LOW VOLTAGE REGION)
60 1.2
COMMON SOURCE COMMON SOURCE
Ta=25 C Ta=25 C
DRAIN CURRENT I D (mA)
2.5
DRAIN CURRENT I D (mA)
50 2.2 1.0 2.5 1.1
1.2
40 0.8
2.0
1.05
30 0.6
1.8
20 0.4 1.0
1.6
1.4
10 0.2 VGS =0.95V
VGS =1.2V 0.9
0.8
0 0
0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE VDS (V)
I DR - V DS I D - VGS
DRAIN REVERSE CURRENT I DR (mA)
50 50
30 30 COMMON SOURCE
COMMON SOURCE VGS =3V
DRAIN CURRENT ID (mA)
10 VGS =0 10
Ta=100 C
3 Ta=25 C 3
1 D 1
0.3 IDR 0.3 Ta=25 C
G
Ta=-25 C
0.1 S 0.1
0.03 0.03
0.01 0.01
0 -0.4 -0.8 -1.2 -1.6 0 1 2 3 4 5
DRAIN-SOURCE VOTAGE V DS (V) GATE-SOURCE VOTAGE VGS (V)
Y fs - I D C - V DS
30
FORWARD TRANSFER ADMITTANCE
100
COMMON COMMON SOURCE
SOURCE VGS =0
50 VDS =3V f=1MHz
CAPACITANCE C (pF)
Ta=25 C
Ta=25 C 10
30
Yfs (mS)
5 C iss
Coss
3
10
C rss
5 1
3 0.5
1 3 5 10 30 50 100 100m 0.3 0.5 1 3 5 10 20
DRAIN CURRENT I D (mA) DRAIN-SOURCE VOLTAGE V DS (V)
2003. 7. 4 Revision No : 0 2/3
KTK5131V
VDS(ON) - I D t - ID
3k 1K
COMMON SOURCE
DRAIN-SOURCE ON VOLTAGE
VGS =2.5V
500
1k Ta=25 C
SWITCHING TIME t (ns)
300 t off
500 tf
VDS(ON) (mV)
300
t on
100 tr
100
50 ID VDD =3V
VOUT
50 D.U. < 1%
=
30 2.5V V IN
0 VIN :t r , t f < 5ns
30
RL
(Z OUT =50)
50
10