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TIP120-TIP127
TO-220 Darlington Transistor
TO-220
1.BASE
2.COLLECTOR
3.EMITTER
3
2
1
Features
TIP120,121,122 Darlington TRANSISTOR (NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
Medium Power Complementary silicon transistors
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter TIP120 TIP121 TIP122 Units
TIP125 TIP126 TIP127
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 2 W
RJA Thermal Resistance Junction to Ambient 62.5 /W
RJc Thermal Resistance Junction to Case 1.92 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltageTIP120,TIP125 60
TIP121,TIP126 V(BR)CBO IC= 1mA,IE=0 80 V
TIP122,TIP127 100
Collector-emitter breakdown voltage TIP120,TIP125 60
TIP121,TIP126 VCEO(SUS) IC= 30mA,IB=0 80 V
TIP122,TIP127 100
Collector cut-off current TIP120,TIP125 VCB= 60 V, IE=0
TIP121,TIP126 ICBO VCB= 80 V, IE=0 0.2 mA
TIP122,TIP127 VCB= 100V, IE=0
Collector cut-off current TIP120,TIP125 VCE=30 V, IB=0
TIP121,TIP126 ICEO VCE=40 V, IB=0 0.5 mA
TIP122,TIP127 VCE=50 V, IB=0
Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA
hFE(1) VCE= 3V, IC=0.5A 1000
DC current gain
hFE(2) VCE= 3V, IC=3 A 1000
IC=3A,IB=12mA 2
Collector-emitter saturation voltage VCE(sat) V
IC=5 A,IB=20mA 4
Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V
Output Capacitance TIP125,TIP126,TIP127 300
Cob VCB=10V, IE=0,f=0.1MHz pF
TIP120,TIP121,TIP122 200
TIP120-TIP127
TO-220 Darlington Transistor
Typical Characteristics