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SEMICONDUCTOR KF3N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF3N60P
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
D _
0.8 + 0.1
FEATURES I
E _
3.6 + 0.2
VDSS= 600V, ID= 3A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : RDS(ON)=3.3 @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
Qg(typ) = 8.5nC J J _
13.08 + 0.3
D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Ta=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
RATING Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE
KF3N60P KF3N60F 2. DRAIN
3. SOURCE
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V TO-220AB
@TC=25 3 3*
ID
Drain Current @TC=100 1.9 1.9* A
KF3N60F
Pulsed (Note1) IDP 7 7*
A C
Single Pulsed Avalanche Energy EAS 120 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 3.2 mJ E DIM MILLIMETERS
(Note 1)
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) C _
2.54 + 0.2
D _
0.8 + 0.1
Drain Power Tc=25 73 31 W
PD E _
3.18 + 0.1
Dissipation
K
Derate above 25 0.58 0.25 W/ F _
3.3 + 0.1
G _
12.57 + 0.2
L M
Maximum Junction Temperature Tj 150 R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics M 1.47 MAX
N N H
N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case RthJC 1.7 4 /W O _
6.68 + 0.2
Q _
4.7 + 0.2
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W 1. GATE R _
2.76 + 0.2
Ambient 1 2 3
Q
2. DRAIN
* : Drain current limited by maximum junction temperature. 3. SOURCE
* Single Gauge Lead Frame
PIN CONNECTION
TO-220IS (1)
(KF3N60P, KF3N60F)
D
G
S
2010. 12. 20 Revision No : 0 1/2
KF3N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.61 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.5A - 2.8 3.3
Dynamic
Total Gate Charge Qg - 8.5 -
VDS=480V, ID=3A
Gate-Source Charge Qgs - 1.8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.6 -
Turn-on Delay time td(on) - 25 -
VDD=300V
Turn-on Rise time tr - 25 -
ID=3A ns
Turn-off Delay time td(off) - 40 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 355 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 45 - pF
Reverse Transfer Capacitance Crss - 4.4 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS Pulsed Source Current ISP - - 12
Diode Forward Voltage VSD IS=3A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=3A, VGS=0V, - 300 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 1.5 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF3N60
KF3N60
F 001 2
P 001 2
1 PRODUCT NAME
2 LOT NO
2010. 12. 20 Revision No : 0 2/2
K3N60P/F
Fig1. ID - VDS Fig2. ID - VGS
1
10
VGS=10V VDS=30V
VGS=7V
Drain Current ID (A)
Drain Current ID (A)
1
10
0
10 VGS=5V
TC=100 C
0
-1
10 25 C
10
-2 -1
10 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 6.0
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
5.0
1.1 VGS=6V
4.0
VGS=10V
1.0 3.0
2.0
0.9
1.0
0.8 0
-100 -50 0 50 100 150 0 1 2 3 4 5 6
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
10
2 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 1.5A
2.5
Normalized On Resistance
10
1 2.0
TC=100 C 1.5
25 C
10
0 1.0
0.5
10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2010. 12. 20 Revision No : 0 37
K3N60P/F
Fig 7. C - VDS Fig8. Qg- VGS
10000 12
ID=3A
Gate - Source Voltage VGS (V)
10
Ciss
Capacitance (pF)
100 8
6 VDS = 480V
Coss
10 4
2
Crss
1 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area Fig10. Safe Operation Area
(KF3N60P) (KF3N60F)
101 Operation in this 101 Operation in this
10