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BLF871
UHF power LDMOS transistor
Rev. 01 -- 18 December 2008 Objective data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at VDS = 40 V in a common-source 860 MHz test circuit.
Mode of operation f PL PL(PEP) PL(AV) Gp D IMD3 PAR
(MHz) (W) (W) (W) (dB) (%) (dBc) (dB)
CW, class AB 860 100 - - 21 60 - -
2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 48 -33 -
DVB-T (8k OFDM) 858 - - 24 22 33 -34[1] 8.35[2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
N Peak envelope power load power = 100 W
N Power gain = 21 dB
N Drain efficiency = 48 %
N Third order intermodulation distortion = -33 dBc
I DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
N Average output power = 24 W
N Power gain = 22 dB
N Drain efficiency = 33 %
N Third order intermodulation distortion = -34 dBc (4.3 MHz from center frequency)
NXP Semiconductors BLF871
UHF power LDMOS transistor
I Integrated ESD protection
I Excellent ruggedness
I High power gain
I High efficiency
I Excellent reliability
I Easy power control
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Communication transmitter applications in the UHF band
I Industrial applications in the UHF band
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain
1
2 gate 1
3 source [1]
3
2
3
2 sym112
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF871 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 89 V
VGS gate-source voltage -0.5 +13 V
Tstg storage temperature -65 +150