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2SA608(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Capable of being used in the low frequency to high
frequency range.
Large current capacity and wide ASO.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -100 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V
Emitter-Base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-25V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -1 A
DC current gain hFE VCE=-6V, IC=-1mA 60 560
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V
Transition frequency fT VCE=-6V, IC=-10mA 180 MHz
Collector output capacitance Cob VCB=-6V, f=1MHz 7 pF
CLASSIFICATION OF hFE
Rank D E F G
Range 60-120 100-200 160-320 280-560
2SA608(PNP)
TO-92 Bipolar Transistors
Typical Characteristics
2SA608(PNP)
TO-92 Bipolar Transistors