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SEMICONDUCTOR KTX301U
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
B
FEATURES B1
Including two(TR, Diode) devices in USV.
1 5 DIM MILLIMETERS
(Ultra Super Mini type with 5 leads) A _
2.00 + 0.20
C
_
A1
2 1.3 + 0.1
A
A1
Simplify circuit design. _
C
B 2.1 + 0.1
3 4 D _
Reduce a quantity of parts and manufacturing process. B1 1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
EQUIVALENT CIRCUIT (TOP VIEW) G 0-0.1
H _
0.9 + 0.1
5 4 Marking T 0.15+0.1/-0.05
H
T
G
5 4
Lot No.
Q1 1. D 1 ANODE
D1
2. Q 1 EMITTER
Type Name
CA 3. Q 1
4. Q 1
BASE
COLLECTOR
5. D 1 CATHODE
1 2 3
1 2 3
MARK SPEC USV
KTX301U KTX301U
Type
Q1 hFE Rank : Y Q1 hFE Rank : GR
Mark CA CB
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5
Collector Current IC -150
Emitter Current IB -30
Collector Power Dissipation PC 100
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
DIODE D1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300
Average Forward Current IO 100
Surge Current (10mS) IFSM 2 A
Power Dissipation PD -
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2008. 8. 29 Revision No : 4 1/2
KTX301U
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100 , IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4 7
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10 dB
Note) hFE Classification Y(4):120~240, GR:200~400.
DIODE D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.60 -
Forward Voltage VF(2) IF=10mA - 0.72 - V
VF(3) IF=100mA - 0.90 1.20
Reverse Current IR VR=80V - - 0.5
Total Capacitance CT VR=0, f=1 - 0.9 3.0
Reverse Recovery Time trr IF=10 - 1.6 4.0
2008. 8. 29 Revision No : 4 2/2