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RUM003N02
Transistor

1.8V Drive Nch MOSFET
RUM003N02

Structure Dimensions (Unit : mm)
Silicon N-channel
VMT3
MOSFET

Applications
Switching

(1)Base(IN)(Gate)
Features (2)Emitter(GND)(Source)
1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol : QT

2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.

Packaging specifications Equivalent circuit
Package Taping Drain

Code T2L
Type
Basic ordering unit
(pieces) 8000

RUM003N02
Gate
2

Absolute maximum ratings (Ta=25