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SEMICONDUCTOR KTB817
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
FEATURES
F
I
Complementary to KTD1047.
E
Recommended for 60W Audio Frequency
C
DIM MILLIMETERS
Amplifier Output Stage. A 15.9 MAX
J
H
B 4.8 MAX
C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
MAXIMUM RATING (Ta=25 ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO -160 V K 1.8 MAX
L _
20.5 + 0.5
Collector-Emitter Voltage VCEO -140 V M 2.8
P _
5.45 + 0.2
Emitter-Base Voltage VEBO -6 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
DC IC -12 1. BASE
Collector Current A 2. COLLECTOR (HEAT SINK)
Pulse ICP -15 3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150 TO-3P(N)
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -0.1 mA
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 mA
hFE (1) (Note) VCE=-5V, IC=-1A 60 - 200
DC Current Gain
hFE 2 VCE=-5V, IC=-6A 20 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-1A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 15 - MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 300 - pF
Turn On Time ton VCC=-20V - 0.25 -
Fall Time tf IC=1A=10 IB1=-10 IB2 - 0.53 - S
Storage Time tstg RL=20 - 1.61 -
Note : hFE(1) Classification O:60 120, Y:100 200
2002. 12. 11 Revision No : 2 1/3
KTB817
I C - VCE h FE - I C
-10 1k
-240mA VCE =-5V
COLLECTOR CURRENT I C (A)
500
DC CURRENT GAIN h FE
-200mA 300
-8
-160mA
-120mA 100
-6
-80mA 50
30
-4
-40mA
10
-20mA 5
-2
3
I B =0
0 1
0 -10 -20 -30 -40 -50 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
VCE(sat) - I C VBE(sat) - I C
-10 -10
COLLECTOR-EMITTER VOLTAGE
IC /I B =10 I C /I B =10
BASE-EMITTER SATURATION
-5
-5
-3
VOLTAGE V BE(sat) (V)
-3
-1
VCE(sat) (V)
-0.5
-0.3 -1
-0.5
-0.1
-0.05 -0.3
-0.03
-0.01 -0.1
-0.1 -0.3 -1 -3 -5 -10 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
I C - V BE fT - IC
-8 100
TRANSITION FREQUENCY f T (MHz)
V CE =-5V VCE =-5V
COLLECTOR CURRENT I C (A)
-7 50
-6 30
-5
-4 10
-3 5
-2 3
-1
0 1
0 -0.4 -0.8 -1.2 -1.6 -0.1 -0.3 -1 -3 -10
BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A)
2002. 12. 11 Revision No : 2 2/3
KTB817
C ob - V CB SAFE OPERATING AREA
COLLECTOR OUTPUT CAPACITANCE
1k -100
f=1MHz
COLLECTOR CURRENT I C (A)
-50
500 -30
300
1m
-10
10 S
10
DC
mS
S
C ob (pF)
0m
-5
100 -3
50 -1
30 -0.5
-0.3
10 -0.1
-1 -3 -10 -30 -100 -1 -3 -10 -30 -100 -300 -1k
COLLECTOR-BASE VOLTAGE V CB (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
2002. 12. 11 Revision No : 2 3/3