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2SB1132 / 2SA1515S / 2SB1237
Transistors


Medium Power Transistor (-32V,-1A)
2SB1132 / 2SA1515S / 2SB1237

Features External dimensions (Unit : mm)
1) Low VCE(sat).
2SB1132 2SA1515S
VCE(sat) = -0.2V(Typ.) 4.5 +0.2
4 + 0.2
- 2 + 0.2
-



0.5 + 0.1
-0.1
(IC / IB = -500mA / -50mA) 1.5 +0.2

-




3 + 0.2
1.6 + 0.1
- -0.1




-
2) Compliments 2SD1664 /




3Min.
4.0 + 0.3
2.5 +0.2
-0.1


2SD1858
-




(15Min.)
(1) (2) (3) 0.45 +0.15
-0.05
0.4 +0.1
-0.05
1.0 + 0.2




0.4 + 0.1
- 0.5 + 0.1
- 0.4 0.1
-




Structure 1.5 + 0.1
- 1.5 + 0.1
-
3.0 + 0.2
- 2.5 +0.4
-0.1 0.5 0.45 +0.15
-0.05
Epitaxial planar type 5

PNP silicon transistor
(1) (2) (3)
(1) Base (1) Emitter
ROHM : MPT3 (2) Collector ROHM : SPT (2) Collector
EIAJ : SC-62 (3) Emitter EIAJ : SC-72 (3) Base
Abbreviated symbol: BA
2SB1237
6.8 + 0.2 2.5 + 0.2
-
-
4.4 + 0.2
-
0.9
1.0




0.65Max.
14.5 + 0.5
-




0.5 + 0.1
-

(1) (2) (3)

2.54 2.54
1.05 0.45 + 0.1
-

(1) Emitter
ROHM : ATV (2) Collector
(3) Base

Denotes h FE




Rev.B 1/4
2SB1132 / 2SA1515S / 2SB1237
Transistors

Absolute maximum ratings (Ta=25