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STL60NH3LL
N-channel 30 V - 0.0065 - 30 A - PowerFLATTM (6x5)
ultra low gate charge STripFETTM Power MOSFET
Features
RDS(on)
Type VDSS ID
(max)
STL60NH3LL 30V <0.0085 16A
Improved die-to-footprint ratio
Very low profile package (1mm max)
s)
Very low thermal resistance PowerFLATTM(6x5)
Very low gate charge
t(
uc
Low threshold device
d
Application
Switching applications P ro
Description
Figure 1.
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Internal schematic diagram
le
This application specific Power MOSFET is the
so
Ob
latest generation of STMicroelectronics unique
"STripFETTM" technology. The resulting transistor
-
(s)
is optimized for low on-resistance and minimal
gate charge. The Chip-scaled PowerFLATTM
ct
package allows a significant board space saving,
still boosting the performance.
o du
e Pr
o let
bs
Table 1. Device summary
Order code Marking Package Packaging
O STL60NH3LL L60NH3LL PowerFLATTM (6 x 5) Tape & reel
December 2007 Rev 6 1/13
www.st.com 13
Contents STL60NH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
t( s)
d uc
P ro
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so
- Ob
ct (s)
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o let
O bs
2/13
STL60NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage