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SEMICONDUCTOR KRC660F~KRC664F
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
B1
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
C
DIM MILLIMETERS
A1
A
High Packing Density. A _
1.0 + 0.05
C
A1 _
0.7 + 0.05
Thin Fine Pitch Super mini 5pin Package.
_
D
B 1.0 + 0.05
B1 _
0.8 + 0.05
C 0.35
D _
0.15 + 0.05
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) H 0.38+0.02/-0.04
_
H
T 0.1 + 0.05
C 5 4
T
R1 Q1 Q2
1. Q 1 IN (BASE)
B 2. Q 1, Q 2 COMMON (EMITTER)
3. Q 2 IN (BASE)
4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)
E 1 2 3
TFSV
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 20 V Collector Power Dissipation PC * 50 mW
Collector-Emitter Voltage VCEO 20 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage TemperatureRange Tstg -55 150
Collector Current IC 50 mA * Total Rating.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 300 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=5mA, IB=0.25mA - - 0.15 V
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 1.2 - pF
KRC660F 3.29 4.7 6.11
KRC661F 7 10 13
Input Resistor R1 -
KRC663F 15.4 22 28.6
KRC664F 32.9 47 61.1
Marking Type Name
5 4
MARK SPEC
TYPE KRC660F KRC661F KRC663F KRC664F
MARK JK JL JN JP
1 2 3
2008. 11. 20 Revision No : 2 1/4
KRC660F~KRC664F
IO - VI(ON) IO - VI(OFF)
KRC660F KRC660F
100 10000
VO= 0.2V VO= 5V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (