a1015_to-92.pdf part of LGE a1015 to-92 a1015_to-92.pdf, . Electronic Components Datasheets Active components Transistors LGE a1015

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A1015
Transistor(PNP)

TO-92
1.EMITTER

2.COLLECTOR

3.BASE

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -150 mA
PD Collector Power Dissipation 400 mW
Tj Junction Temperature 125
Tstg Storage Temperature -55-125

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V

Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 A

Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 A

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A

DC current gain hFE VCE= -6V, IC= -2mA 70 400

Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -10mA -1.1 V
VCE= -10 V, IC= -1mA
Transition frequency fT 80 MHz
f =30MHz
Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHZ 7 pF
VCE= -6 V, IC= -0.1mA,
Noise Figure NF 6 dB
f =1KHz,RG=10K
CLASSIFICATION OF hFE
Rank O Y GR

Range 70-140 120-240 200-400
A1015
Transistor(PNP)

Typical Characteristics